The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
May. 09, 2007
Applicants:
Arpan Chakraborty, Isla Vista, CA (US);
Kwang-choong Kim, Seoul, KR;
James S. Speck, Goleta, CA (US);
Steven P. Denbaars, Goleta, CA (US);
Umesh K. Mishra, Montecito, CA (US);
Inventors:
Arpan Chakraborty, Isla Vista, CA (US);
Kwang-Choong Kim, Seoul, KR;
James S. Speck, Goleta, CA (US);
Steven P. DenBaars, Goleta, CA (US);
Umesh K. Mishra, Montecito, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiN) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNnanomask layer.