The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Sep. 21, 2006
Myoung-soo Kim, Suwon-si, KR;
Myoung-Soo Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of forming an alignment key with a capping layer in a semiconductor device without an additional mask formation process, and a method of fabricating a semiconductor device using the same, may be provided. The method of forming an alignment key may include forming an isolation layer confining an active region in a chip region of a semiconductor substrate, and forming an alignment key having a step height difference with respect to the surface of the semiconductor substrate in a scribe lane. An at least one formation layer for forming an element may be formed on the substrate, and patterned, to form an element-forming pattern on the semiconductor substrate in the chip region, and a capping layer capping the alignment key on the semiconductor substrate in the scribe lane.