The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Nov. 19, 2008
Seong-gyun Kim, Seongnam-si, KR;
Ji-hoon Park, Seoul, KR;
Sang-woo Kang, Seoul, KR;
Sung-woo Park, Gunpo-si, KR;
Seong-Gyun Kim, Seongnam-si, KR;
Ji-Hoon Park, Seoul, KR;
Sang-Woo Kang, Seoul, KR;
Sung-Woo Park, Gunpo-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A non-volatile memory device includes an upwardly protruding fin disposed on a substrate and a control gate electrode crossing the fin. A floating gate is interposed between the control gate electrode and the fin and includes a first storage gate and a second storage gate. The first storage gate is disposed on a sidewall of the fin, and the second storage gate is disposed on a top surface of the fin and is connected to the first storage gate. A first insulation layer is interposed between the first storage gate and the sidewall of the fin, and a second insulation layer is interposed between the second storage gate and the top surface of the fin. The second insulation layer is thinner than the first insulation layer. A blocking insulation pattern is interposed between the control gate electrode and the floating gate.