The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Nov. 30, 2005
Won-jun Jang, Seoul, KR;
In-sun Park, Gyeonggi-do, KR;
Jae-young Park, Gyeonggi-do, KR;
Ki-vin Im, Gyeonggi-do, KR;
Yong-woo Hyung, Gyeonggi-do, KR;
Won-Jun Jang, Seoul, KR;
In-Sun Park, Gyeonggi-do, KR;
Jae-Young Park, Gyeonggi-do, KR;
Ki-Vin Im, Gyeonggi-do, KR;
Yong-Woo Hyung, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd, Suwon-si, KR;
Abstract
In an embodiment, a storage electrode of a capacitor in a semiconductor device is resistant to inadvertent etching during its manufacturing processes. A method of forming the storage electrode of the capacitor is described. The storage electrode of the capacitor may include a first metal layer electrically connected with a source region of a transistor through a contact plug penetrating an insulating layer on a semiconductor substrate. A polysilicon layer may then be formed on the first metal layer. A second metal layer is formed on the polysilicon layer.