The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Oct. 04, 2006
Norbert Fruehauf, Sindelfingen, DE;
Holger Baur, Durlangen, DE;
Efstathios Persidis, Stuttgart, DE;
Patrick Schalberger, Friolzheim, DE;
Norbert Fruehauf, Sindelfingen, DE;
Holger Baur, Durlangen, DE;
Efstathios Persidis, Stuttgart, DE;
Patrick Schalberger, Friolzheim, DE;
Universitaet Stuttgart, Stuttgart, DE;
Abstract
A method of manufacturing transistors of a first and second type on a substrate includes producing doped semiconductor areas with a first conductivity type in eventual contact areas of a first type of transistors, depositing a first intrinsic semiconductor layer over an entire surface, activating dopants in the semiconductor areas such that a contact area with the first conductivity type is produced in the intrinsic semiconductor layer, depositing a gate dielectric, producing a gate electrode by depositing a first conductive layer and patterning the first conductive layer, performing ion doping with dopants to produce contact areas with a second conductivity type for a second type of transistor, depositing a passivation layer, opening contact openings, and depositing and patterning a second conductive layer.