The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Dec. 03, 2007
Ki Jun Yun, Suwon-si, KR;
Sang IL Hwang, Wonju-si, KR;
Ki Jun Yun, Suwon-si, KR;
Sang Il Hwang, Wonju-si, KR;
Dongbu HiTek Co., Ltd., Seoul, KR;
Abstract
Provided is a method for manufacturing an image sensor. The method includes the following. A color filter layer is formed on a semiconductor substrate having a photodiode and a transistor formed thereon. A planarization layer is formed on the color filter layer. An LTO (Low Temperature Oxide) layer is formed on the planarization layer. A photoresist pattern is formed to correspond to the color filter layer on the LTO layer, and a reflow process is performed. A microlens array is formed by reactive ion etching the photoresist pattern and the LTO layer. A second reflow process may be performed on the photoresist pattern and/or the LTO layer during the reactive ion etching process.