The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Jul. 27, 2006
Kyu-ho Cho, Seongnam-si, KR;
Seung-ho Yoo, Daejeon, KR;
Byung-soo Kim, Daejeon, KR;
Jae-sun Jung, Gongju-si, KR;
Han-jin Lim, Seoul, KR;
Ki-chul Kim, Seongnam-si, KR;
Jae-soon Lim, Seoul, KR;
Kyu-Ho Cho, Seongnam-si, KR;
Seung-Ho Yoo, Daejeon, KR;
Byung-Soo Kim, Daejeon, KR;
Jae-Sun Jung, Gongju-si, KR;
Han-Jin Lim, Seoul, KR;
Ki-Chul Kim, Seongnam-si, KR;
Jae-Soon Lim, Seoul, KR;
Samsung Electronics Co., Ltd., , KR;
Techno Semichem Co., Ltd., , KR;
Abstract
The present invention provides organometallic compounds and methods of forming thin films including using the same. The organometallic compounds include a metal and a ligand linked to the metal. The ligand can be represented by the following formula (1): wherein Rand Rare each independently hydrogen or an alkyl group. The thin films may be applied to semiconductor structures such as a gate insulation layer of a gate structure and a dielectric layer of a capacitor.