The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Mar. 01, 2006
Applicants:
Satoshi Tamura, Osaka, JP;
Norio Ikedo, Osaka, JP;
Inventors:
Satoshi Tamura, Osaka, JP;
Norio Ikedo, Osaka, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a first nitride semiconductor layer formed on a substrate and a second nitride semiconductor layer formed on the first nitride semiconductor layer so as to be in contact with the first nitride semiconductor layer. The first nitride semiconductor layer contains a p-type impurity. The second nitride semiconductor layer contains an n-type impurity and a p-type impurity. In the second nitride semiconductor layer, the concentration of the n-type impurity is higher than the concentration of the p-type impurity.