The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Dec. 18, 2006
Tohru Takiguchi, Tokyo, JP;
Chikara Watatani, Tokyo, JP;
Tohru Takiguchi, Tokyo, JP;
Chikara Watatani, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A buried type semiconductor laseris made of a p-type InP substrateand includes a ridge sectionmade up of a p type InP first clad layer, AlGaInAs distorted quantum well active layerand n type InP second clad layerlaminated one atop another. On both sides of the ridge section, an buried current block layermade up of a p-type InP first buried layer, n-type InP second buried layerand semi-insulating Fe-doped InP third buried layerlaminated one atop another is formed. A top face of the third buried layeris covered with an n-type InP semiconductor layer. The above structure can suppress the occurrence of a leakage current path on the top face of the third buried layerand improve reliability of the buried type semiconductor laser.