The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Nov. 01, 2005
Souji Sunairi, Kanagawa, JP;
Souji Sunairi, Kanagawa, JP;
NEC Electronics Corporation, Kawasaki, Kanagawa, JP;
Abstract
A semiconductor device in which surge breakdown of interlayer-insulating film does not occur even when effectively suppressing variations in etching and proximity effects. The semiconductor comprises dummy patternsthat are made from a gate layer and shaped to be disposed within the surface shape of the insulating material of element-isolation areasand are located on the insulating material of the element-isolation areas; wherein dummy patternsare located on an underlayer that includes area directly under wiring layersthat are located on layers above the gate layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile