The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Jan. 09, 2009
Kimberley C. Hall, Halifax, CA;
Wayne H. Lau, Goleta, CA (US);
Kenan Gündo{hacek Over (G)}du, Iowa City, IA (US);
Michael E. Flatté, Iowa City, IA (US);
Thomas F. Boggess, Iowa City, IA (US);
Kimberley C. Hall, Halifax, CA;
Wayne H. Lau, Goleta, CA (US);
Kenan Gündo{hacek over (g)}du, Iowa City, IA (US);
Michael E. Flatté, Iowa City, IA (US);
Thomas F. Boggess, Iowa City, IA (US);
University of Iowa Research Foundation, Iowa City, IA (US);
Abstract
A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and/or high-density and/or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads. The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and/or spin detection.