The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Jul. 13, 2007
Byoung Deog Choi, Suwon-si, KR;
Jun Sin Yi, Suwon-si, KR;
Sung Wook Jung, Suwon-si, KR;
Sung Hyung Hwang, Suwon-si, KR;
Byoung Deog Choi, Suwon-si, KR;
Jun Sin Yi, Suwon-si, KR;
Sung Wook Jung, Suwon-si, KR;
Sung Hyung Hwang, Suwon-si, KR;
Samsung Mobile Display Co., Ltd., Yongin, KR;
Abstract
A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiON) layer using nitrous oxide (NO) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.