The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Jul. 27, 2006
Hiroki Nagasaki, Kyoto, JP;
Shouzi Tanaka, Nara, JP;
Hiroki Nagasaki, Kyoto, JP;
Shouzi Tanaka, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
Realized is a solid-state imaging device capable of achieving both a finer pixel size and high light receiving efficiency with an excellent image characteristic. A high concentration p-well layer () is partially formed in the interior of a semiconductor substrate () centering on a region under a STI (), and a photoelectric conversion layer () is formed so as to extend to a region under a gate electrode (). Furthermore, a salicide region () covers only a portion of a surface of the gate electrode () and is formed at a position closer to a side at which a drain region () is provided. Thus, an incident light is allowed to pass through a portion, included in the surface of the gate electrode (), on which the salicide region () is not formed, and then to be further incident on the photoelectric conversion layer () extending to the region under the gate electrode ().