The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Sep. 28, 2007
Ramachandran Muralidhar, Mahopac, NY (US);
Tushar P. Merchant, Austin, TX (US);
Rajesh A. Rao, Austin, TX (US);
Ramachandran Muralidhar, Mahopac, NY (US);
Tushar P. Merchant, Austin, TX (US);
Rajesh A. Rao, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A phase change memory cell has a first electrode, a heater, a phase change material, and a second electrode. The heater is over the first electrode, and the heater includes a pillar. The phase change material is around the heater. The second electrode is electrically coupled to the phase change material. In some embodiments, a method includes forming a electrode layer over a substrate, depositing a first layer, providing nanoclusters over the first layer, and etching the first layer. The first layer comprises one of a group consisting of a heater material and a phase change material. The first layer may be etched using the nanocluster defined pattern to form pillars from the first layer.