The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Nov. 05, 2003
Ryuichiro Maruyama, Kanagawa, JP;
Masafumi Ata, Kanagawa, JP;
Masashi Shiraishi, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube () having an outer semiconductive carbon nanotube layer () and an inner metallic carbon nanotube layer () that is partially covered by the outer semiconductive carbon nanotube layer (). A metal source electrode () and a metal drain electrode () are brought into contact with both ends of the semiconductive carbon nanotube layer () while a metal gate electrode () is brought into contact with the metallic carbon nanotube layer (). The space between the semiconductive carbon nanotube layer () and the metallic carbon nanotube layer () is used as a gate insulating layer. Two layers including the outer semiconductive carbon nanotube layer () and the inner metallic carbon nanotube layer () are selected from carbon nanotube layers of a multi-walled carbon nanotube. These layers are processed into a form suitable for use as the multi-walled carbon nanotube ().