The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Mar. 28, 2007
Applicant:
Thomas Herman, Manhattan Beach, CA (US);
Inventor:
Thomas Herman, Manhattan Beach, CA (US);
Assignee:
International Rectifier Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A low contact resistance ohmic contact for a III-Nitride or compound semiconductor wafer or die consists of 4 layers of Ti, AlSi, Ti and TiW. The AlSi has about 1% Si. The layers are sequentially deposited as by sputtering, are patterned and plasma etched and then annealed in a rapid thermal anneal process. The use of AlSi in place of pure Al reduces contact resistance by about 15% to 30%.