The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Oct. 18, 2006
Applicants:
Qiang Chen, Sollentuna, SE;
Gordon MA, Phoenix, AZ (US);
Inventors:
Qiang Chen, Sollentuna, SE;
Gordon Ma, Phoenix, AZ (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01);
U.S. Cl.
CPC ...
Abstract
A protective device in a semiconductor may comprise a substrate of a first conductivity type, an epitaxial layer formed on top of the substrate, a body area formed within the epitaxial layer of a second conductivity type extending from a top surface into the epitaxial layer, a first area of the first conductivity type extending from the top surface into the body area, an isolation area surrounding the first area, a ring area of the first conductivity type surrounding the isolation area, and a coupling structure for connecting the ring area with the substrate.