The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2010

Filed:

Aug. 31, 2007
Applicants:

Dong-yu Kim, Gwangju, KR;

Ji-eun Ghim, Gwangju, KR;

Chae-min Chun, Gwangju, KR;

Bo-gyu Lim, Gwangju, KR;

Inventors:

Dong-Yu Kim, Gwangju, KR;

Ji-Eun Ghim, Gwangju, KR;

Chae-Min Chun, Gwangju, KR;

Bo-Gyu Lim, Gwangju, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein are a perfluoroalkyleneoxy group-substituted phenylethylsilane compound and a polymer thereof. The perfluoroalkyleneoxy group-substituted phenylethylsilane compound represented by Formula 1 has excellent thermal and chemical stability to be solution-processed in a monomer state, and the polymer prepared by thermally crosslinking the compound has a high resistance to organic solvents. Moreover, since an insulating layer prepared by applying the same shows improved thermal and physical properties, it is possible to manufacture organic thin-film transistors having a high on/off ratio in a simple process such as a photolithography for a large-size substrate: wherein R, R, R, Z, Z, Z, and n are the same as defined in the detailed description of the invention.


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