The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Dec. 11, 2006
Olivier Parriaux, Saint-Etienne, FR;
Alexander V. Tishchenko, Saint-Etienne, FR;
Reinhold Mutschler, Villingen-Schwenningen, DE;
Olivier Parriaux, Saint-Etienne, FR;
Alexander V. Tishchenko, Saint-Etienne, FR;
Reinhold Mutschler, Villingen-Schwenningen, DE;
Sick Stegmann GmbH, Donaueschingen, DE;
Abstract
The invention relates to an information carrier (), having a metal layer () with at least one track () in which marks () are disposed, which can be detected by means of light of a central wavelength (λ) which is emitted by a light source () and which is incident upon the information carrier () at an angle (θ), and from which the position of the information carrier () can be derived, wherein the marks () are formed by areas () which are structured at least by first structures () of a lattice period (Λ) which are disposed on the back side () of the metal layer () and/or on the front side () of the metal layer (), and wherein the lattice period (Λ) of the first structures () satisfies the equation Λ=λ/(n*−sin(⊖)) or Λ=λ/(n*+sin(⊖)), wherein λ is the central wavelength of the used light, ⊖is the angle at which the light of the light source () is incident upon the information carrier () and n* is the effective index of a plasmon mode along the metal layer ().