The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Dec. 03, 2007
Hyun Sook Jun, Incheon, KR;
Ki Lyoung Lee, Hwaseong-si, KR;
Hyun Sook Jun, Incheon, KR;
Ki Lyoung Lee, Hwaseong-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for manufacturing a semiconductor device includes forming a gate conductive layer, a first mask layer, a second mask layer, and a third mask layer over a semiconductor substrate that includes a cell region and a peripheral region. The method also includes forming a second mask pattern and a third mask pattern using a gate mask. The method further includes trimming the second mask pattern in the peripheral region to form a fourth mask pattern having a size smaller than that of the second mask pattern. Still further, the method includes removing the third mask pattern, and patterning the first mask layer and the gate conductive layer using the fourth mask pattern as a mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile