The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2010

Filed:

Jul. 17, 2007
Applicants:

Yunfei Deng, San Jose, CA (US);

Ryoung-han Kim, San Jose, CA (US);

Thomas I. Wallow, San Carlos, CA (US);

Inventors:

Yunfei Deng, San Jose, CA (US);

Ryoung-han Kim, San Jose, CA (US);

Thomas I. Wallow, San Carlos, CA (US);

Assignee:

GlobalFoundries Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Ultrafine dimensions, smaller than conventional lithographic capabilities, are formed employing an efficient inverse spacer technique comprising selectively removing spacers. Embodiments include forming a first mask pattern over a target layer, forming a spacer layer on the upper and side surfaces of the first mask pattern leaving intermediate spaces, depositing a material in the intermediate spacers leaving the spacer layer exposed, selectively removing the spacer layer to form a second mask pattern having openings exposing the target layer, and etching the target layer through the second mask pattern.


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