The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Jun. 22, 2007
Applicants:
Nicola Vannucci, Fuernitz, AT;
Hubert Maier, Villach, AT;
Inventors:
Nicola Vannucci, Fuernitz, AT;
Hubert Maier, Villach, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
The method of forming a semiconductor structure in a substrate comprises, forming a first trench with a first width Wand a second trench with a second width W, wherein the first width Wis larger than the second width W, depositing a protection material, lining the first trench, covering the substrate surface and filling the second trench and removing partially the protection material, wherein a lower portion of the second trench remains filled with the protection material.