The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Dec. 30, 2008
Hiroshi Watanabe, Yokohama, JP;
Atsuhiro Kinoshita, Kamakura, JP;
Akira Takashima, Tokyo, JP;
Daisuke Hagishima, Tokyo, JP;
Hiroshi Watanabe, Yokohama, JP;
Atsuhiro Kinoshita, Kamakura, JP;
Akira Takashima, Tokyo, JP;
Daisuke Hagishima, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor storage device includes a semiconductor substrate; a plurality of isolation regions formed in the semiconductor substrate; an element-forming region formed between adjacent isolation regions; a first gate insulating film provided on the element-forming region; a floating gate electrode which is provided on the first gate insulating film and in which a width of a lower hem facing the element-forming region is narrower than a width of the element-forming region in a section taken in a direction perpendicular to a direction in which the isolation regions extend; a second gate insulating film provided on the floating gate electrode; and a control gate electrode provided on the second gate insulating film.