The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Sep. 30, 2003
Kwang Su Choe, Sungnam-Shi, KR;
Keith E. Fogel, Mohegan Lake, NY (US);
Siegfried L. Maurer, Stormville, NY (US);
Ryan M. Mitchell, Clintondale, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Kwang Su Choe, Sungnam-Shi, KR;
Keith E. Fogel, Mohegan Lake, NY (US);
Siegfried L. Maurer, Stormville, NY (US);
Ryan M. Mitchell, Clintondale, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of fabricating silicon-on-insulators (SOIs) having a thin, but uniform buried oxide region beneath a Si-containing over-layer is provided. The SOI structures are fabricated by first modifying a surface of a Si-containing substrate to contain a large concentration of vacancies or voids. Next, a Si-containing layer is typically, but not always, formed atop the substrate and then oxygen ions are implanted into the structure utilizing a low-oxygen dose. The structure is then annealed to convert the implanted oxygen ions into a thin, but uniform thermal buried oxide region.