The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Jun. 27, 2008
Morteza Cyrus Afghahi, Coto De Caza, CA (US);
Esin Terzioglu, Aliso Viejo, CA (US);
Gil I. Winograd, Aliso Viejo, CA (US);
Melinda L. Miller, Anaheim, CA (US);
Morteza Cyrus Afghahi, Coto De Caza, CA (US);
Esin Terzioglu, Aliso Viejo, CA (US);
Gil I. Winograd, Aliso Viejo, CA (US);
Melinda L. Miller, Anaheim, CA (US);
Novelics, LLC, Aliso Viejo, CA (US);
Abstract
In one embodiment, a hybrid DRAM is provided that includes: a sense amplifier including a differential amplifier and regenerative latch, wherein the differential amplifier and regenerative latch are constructed using core transistors that have a relatively thin gate oxide; and a plurality of memory cells coupled to the sense amplifier through a pair of bit lines, wherein each memory cell includes an access transistor coupled to a storage cell, the access transistor having a relatively thick gate oxide, whereby the storage capacitor is capable of being charged to a VIO power supply voltage that is greater than a VDD power supply voltage for the core transistors.