The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Apr. 10, 2009
Ko Kanaya, Tokyo, JP;
Seiki Goto, Tokyo, JP;
Shinsuke Watanabe, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A cascode circuit for a high-gain or high-output millimeter-wave device that operates with stability. The cascode circuit including two cascode-connected transistors includes: a first high electron mobility transistor (HEMT) including a source that is grounded; a second HEMT including a source connected to a drain of the first HEMT; a reflection gain restricting resistance connected to the gate of the second HEMT, for restricting reflection gain; and an open stub connected to a side of the reflection gain restricting resistance which is opposite the side connected to the second HEMT, for short-circuiting high-frequency signals at a predetermined frequency and nearby frequencies.