The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Apr. 24, 2008
Hisashi Takasu, Hazu-gun, JP;
Takeshi Inoue, Nagoya, JP;
Tomonori Kimura, Obu, JP;
Takanari Sasaya, Toyohashi, JP;
Hisashi Takasu, Hazu-gun, JP;
Takeshi Inoue, Nagoya, JP;
Tomonori Kimura, Obu, JP;
Takanari Sasaya, Toyohashi, JP;
Denso Corporation, Kariya, JP;
Abstract
A method for controlling a vertical type MOSFET in a bridge circuit is provided to reduce diode power loss and improve a reverse recovery characteristic. The method includes controlling a forward voltage of a built-in diode of the vertical type MOSFET to be a first forward voltage by setting a gate voltage of the vertical MOSFET to a first gate voltage, so that the vertical type MOSFET is switched into a first off mode; and controlling the forward voltage of the built-in diode of the vertical type MOSFET to be a second forward voltage by setting the gate voltage of the vertical MOSFET to a second gate voltage, so that the vertical type MOSFET is switched into a second off mode.