The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2010

Filed:

Dec. 07, 2007
Applicants:

Masanori Nagase, Miyagi, JP;

Jiro Matsuda, Miyagi, JP;

Tsuneo Sasamoto, Miyagi, JP;

Toshiaki Hayakawa, Miyagi, JP;

Inventors:

Masanori Nagase, Miyagi, JP;

Jiro Matsuda, Miyagi, JP;

Tsuneo Sasamoto, Miyagi, JP;

Toshiaki Hayakawa, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A solid state imaging device comprises: a photoelectric converting portion provided on a semiconductor substrate; a charge transfer path, formed in an adjacent position to the photoelectric converting portion, that receives a signal charge generated in the photoelectric converting portion and transfers the signal charge in a predetermined direction; and a gate electrode that transfers the signal charge from the photoelectric converting portion to the charge transfer path, wherein the gate electrode comprises polysilicon having a different conductive type from that of a semiconductor region forming a charge storing portion of the charge transfer path.


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