The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2010

Filed:

Oct. 23, 2008
Applicant:

Masaharu Sato, Kanagawa, JP;

Inventor:

Masaharu Sato, Kanagawa, JP;

Assignee:

NEC Electronics Corporation, Kawasaki, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a pair of transistors formed in a first conductive type semiconductor substrate. Each of the transistors contains a collector region of a second conductive type, opposite to the first conductive type, formed in the semiconductor substrate, a base region of the first conductive type formed in the collector region, and an emitter region of the second conductive type formed in the base region, the collector region of one transistor of the pair of transistors being separated from that of the other transistor. The semiconductor device further includes a first region of the first conductive type formed between the collector regions of the pair of transistors, and a buried layer of the second conductive type formed in the semiconductor substrate under the collector region of one transistor of the pair of transistors to connect the collector regions of the transistors therethrough.


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