The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Jun. 09, 2006
Aaron Anthony Pesetski, Gamgrills, MD (US);
Hong Zhang, Gamgrills, MD (US);
John Douglas Adam, Millersville, MD (US);
John Przybysz, Severna Park, MD (US);
Jim Murduck, Ellicott City, MD (US);
Norman Goldstein, Ellicott City, MD (US);
James Baumgardner, Ellicott City, MD (US);
Aaron Anthony Pesetski, Gamgrills, MD (US);
Hong Zhang, Gamgrills, MD (US);
John Douglas Adam, Millersville, MD (US);
John Przybysz, Severna Park, MD (US);
Jim Murduck, Ellicott City, MD (US);
Norman Goldstein, Ellicott City, MD (US);
James Baumgardner, Ellicott City, MD (US);
Northrop Grumman Systems Corporation, Los Angeles, CA (US);
Abstract
A carbon nanotube field effect transistor includes a substrate, a source electrode, a drain electrode and a carbon nanotube. The carbon nanotube forms a channel between the source electrode and the drain electrode. The carbon nanotube field effect transistor also includes a gate dielectric and a gate electrode. The gate electrode is separated from the carbon nanotube by the gate dielectric, and an input radio frequency voltage is applied to the gate electrode.