The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Dec. 20, 2007
Applicants:
Koji Otsuka, Niiza, JP;
Osamu Machida, Niiza, JP;
Hitoshi Murofushi, Niiza, JP;
Inventors:
Assignee:
Sanken Electric Co., Ltd., , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01); H01L 29/778 (2006.01); H01L 29/812 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high electron mobility transistor is disclosed which has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the substrate, an electron transit layer on the buffer layer, and an electron supply layer on the electron transit layer. A source, drain, and gate overlie the electron supply layer. Also formed on the electron supply layer is a surface-stabilizing organic semiconductor overlay which is of p conductivity type in contrast to the n type of the electron supply layer.