The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Aug. 14, 2007
Hans S. Cho, Seoul, KR;
Takashi Noguchi, Seongnam-si, KR;
Wenxu Xianyu, Yongin-si, KR;
Do-young Kim, Suwon-si, KR;
Huaxiang Yin, Yongin-si, KR;
Xiaoxin Zhang, Yongin-si, KR;
Hans S. Cho, Seoul, KR;
Takashi Noguchi, Seongnam-si, KR;
Wenxu Xianyu, Yongin-si, KR;
Do-Young Kim, Suwon-si, KR;
Huaxiang Yin, Yongin-si, KR;
Xiaoxin Zhang, Yongin-si, KR;
Samsung Electronics Co., Ltd, Gyeonggi-do, KR;
Abstract
A silicon nanowire substrate having a structure in which a silicon nanowire film having a fine line-width is formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the silicon nanowire substrate includes preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.