The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Jan. 17, 2007
Prabhat Agarwal, Brussels, BE;
Jan Sonsky, Leuven, BE;
Lasse Juhana Kauppinen, Anjalankoski, FI;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
A avalanche mode photodiode array () is fabricated using a silicon on insulator wafer and substrate transfer process. The array includes a plurality of photodiodes (). The photodiodes () include an electrically insulative layer (), a depletion region (), and first () and second () doped regions. An interconnection layer () includes electrodes () which provides electrical connections to the photodiodes. The photodiode array () is carried by a handle wafer ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile