The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Jun. 05, 2007
Cheol-hwan Park, Icheon-si, KR;
Dong-su Park, Icheon-si, KR;
Eun A. Lee, Seoul, KR;
Hye Jin Seo, Suwon-Si, KR;
Cheol-Hwan Park, Icheon-si, KR;
Dong-Su Park, Icheon-si, KR;
Eun A. Lee, Seoul, KR;
Hye Jin Seo, Suwon-Si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for forming a capacitor in a semiconductor device is disclosed. The method includes forming a storage node electrode on a semiconductor substrate, forming a dielectric layer having a high dielectric constant on the storage node electrode, depositing a plate electrode on the dielectric layer, thereby forming by-product impurities, and removing by-product impurities remaining on the plate electrode by introducing a hydrogen (H) atom-containing gas onto the semiconductor substrate while depositing a capping layer on the plate electrode.