The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2010

Filed:

Oct. 10, 2007
Applicants:

Anil Kumar Chinthakindi, Haymarket, VA (US);

Deok-kee Kim, Bedford Hills, NY (US);

Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);

Byeongju Park, Plainview, NY (US);

Inventors:

Anil Kumar Chinthakindi, Haymarket, VA (US);

Deok-Kee Kim, Bedford Hills, NY (US);

Chandrasekharan Kothandaraman, Hopewell Junction, NY (US);

Byeongju Park, Plainview, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A fuse structure, a method for fabricating the fuse structure and a method for programming a fuse within the fuse structure each use a fuse material layer that is used as a fuse, and located upon a monocrystalline semiconductor material layer in turn located over a substrate. At least part of the monocrystalline semiconductor material layer is separated from the substrate by a gap. Use of the monocrystalline semiconductor material layer, as well as the gap, provides for enhanced uniformity and reproducibility when programming the fuse.


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