The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2010

Filed:

Dec. 15, 2003
Applicants:

Kars-michiel Hubert Lenssen, Eindhoven, NL;

Robert Jochemsen, Eindhoven, NL;

Inventors:

Kars-Michiel Hubert Lenssen, Eindhoven, NL;

Robert Jochemsen, Eindhoven, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/30 (2006.01); G06F 12/14 (2006.01); G11C 19/08 (2006.01); G11C 15/02 (2006.01); G11C 11/06 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Data, stored in MRAM-cells () should be protected against misuse or read-out by unauthorised persons. The present invention provides an array () of MRAM-cells () provided with a security device () for destroying data stored in the MRAM-cells () when they are tampered with. This is achieved by placing a permanent magnet () adjacent the MRAM-array () in combination with a soft-magnetic flux-closing layer (). As long as the soft-magnetic layer () is present, the magnetic field lines () from the permanent magnet () are deviated and flow through this soft-magnetic layer (). When somebody is tampering with the MRAM-array (), e.g. by means of reverse engineering, and the flux-closing layer () is removed, the flux is no longer deviated and affects the nearby MRAM-array (), thus destroying the data stored in the MRAM-cells ().


Find Patent Forward Citations

Loading…