The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Mar. 08, 2006
Ken Tsuzuki, Zama, JP;
Nobuhiro Kikuchi, Zama, JP;
Eiichi Yamada, Yokosuka, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
There is provided a semiconductor optical modulator capable of performing a stable operation and having an excellent voltage-current characteristic to an electric field while exhibiting the characteristic of a semiconductor optical modulator with an n-i-n structure. The semiconductor optical modulator includes a waveguide structure that is formed by sequentially growing an n-type InP clad layer (), a semiconductor core layer () having an electro-optic effect, a p-InAlAs layer (), and an n-type InP clad layer (). An electron affinity of the p-InAlAs layer () is smaller than an electron affinity of the n-type InP clad layer (). In the waveguide structure having such a configuration, a non-dope InP clad layer () and a non-dope InP clad layer () may be respectively provided between the n-type InP clad layer () and the semiconductor core layer (), and between the semiconductor core layer () and the p-InAlAs layer ().