The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Aug. 23, 2006
Tetsuhiro Tanabe, Kyoto, JP;
Tetsuhiro Tanabe, Kyoto, JP;
Rohm Co., Ltd., Kyoto-shi, JP;
Abstract
There is disclosed a monolithic semiconductor laser which is provided with an AlGaAs based semiconductor laser element () and an InGaAlP based semiconductor laser element () formed on a semiconductor substrate (). The AlGaAs based semiconductor laser element () is composed of an infrared light emitting layer forming portion (), which has an n-type cladding layer (), an active layer () and a p-type cladding layer () formed so as to have a ridge portion, and a current constriction layer () provided on sides of the ridge portion, while the InGaP based semiconductor laser element () is composed of a red light emitting layer forming portion (), which has an n-type cladding layer (), an active layer () and a p-type cladding layer () formed so as to have a ridge portion, and a current constriction layer () provided on sides of the ridge portion. The current constriction layers of the both elements are made of the same material having a larger band gap than that of the active layer () of the red light emitting layer forming portion. Consequently, there can be obtained a monolithic semiconductor laser capable of high temperature and high output operation without increasing the number of processes of the growth.