The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7710788 B1

PDF
Full Text
Expired
Date of Patent:
May. 04, 2010

Filed:

Oct. 25, 2007
Applicants:

Hong-soo Jeon, Suwon-si, KR;

Dae-han Kim, Gangdong-gu, KR;

Inventors:

Hong-Soo Jeon, Suwon-si, KR;

Dae-Han Kim, Gangdong-gu, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/03 (2006.01);
U.S. Cl.
CPC ...
Abstract

A flash memory device includes a flash fuse cell array, a trim code processing unit, a flash memory array, and a regulator. The fuse cell array, which includes multiple nonvolatile fuse cells, is configured to store a first trim code. The trim code processor is configured to generate a second trim code based on the first trim code provided by the fuse cell array and a voltage control code. The flash memory array includes multiple flash memory cells. The regulator is configured to generate a high voltage in response to the second trim code and to provide the high voltage to the flash memory array. The high voltage varies according to erase, program and read operations of the flash memory cells.


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Jeon, Hong-Soo. (2010). Flash memory device and method of testing a flash memory device (U.S. Patent No. 7710788). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7710788

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