The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Aug. 18, 2008
Toshifumi Nakatani, Osaka, JP;
Takahito Miyazaki, Kyoto, JP;
Toshifumi Nakatani, Osaka, JP;
Takahito Miyazaki, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A variable attenuator, used with high frequency, provides large variable attenuation per stage. The variable attenuator includes: a MOSFET having a gate, a drain, a source, and a body; an attenuation control circuit; and a temperature characteristics compensation circuit. The attenuation control circuit supplies a control voltage to the gate, the drain, and the source. The temperature characteristics compensation circuit supplies a temperature compensation voltage to the body. An input terminal and an output terminal are connected to the drain and the source of the MOSFET. The temperature characteristics compensation circuit, in accordance with an operating temperature of the MOSFET, controls a voltage to be supplied to the body and adjusts, based on a relation between a body voltage and a gate voltage, a resistance value of a current flowing between the input terminal and the output terminal.