The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Oct. 29, 2006
Applicants:
Prabhat Agarwal, Brussels, BE;
Godefridus A. M. Hurkx, Best, NL;
Inventors:
Prabhat Agarwal, Brussels, BE;
Godefridus A. M. Hurkx, Best, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/095 (2006.01);
U.S. Cl.
CPC ...
Abstract
A metal-base transistor is suggested. The transistor comprises a first and a second electrode () and base electrode () to control current flow between the first and second electrode. The first electrode () is made from a semiconduction material. The base electrode () is a metal layer deposited on top of the semiconducting material forming the first electrode. According the invention the second electrode is formed by a semiconducting nanowire () being in electrical contact with the base electrode ().