The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Nov. 09, 2007
Noriyuki Miura, Kanagawa, JP;
Noriyuki Miura, Kanagawa, JP;
Oki Semiconductor Co., Ltd., Tokyo, JP;
Abstract
A photodiode that can separately detect the intensities of the three wavelength ranges of ultraviolet light of 400 nm or below includes an insulating layer; and a plurality of silicon semiconductor layers having different thicknesses formed on the insulating layer, wherein each of the plurality of silicon semiconductor layers has a low-concentration diffusion layer formed by diffusing one of a P-type impurity or an N-type impurity therein with a low concentration; a P-type high-concentration diffusion layer formed by diffusing a P-type impurity therein with a high concentration; and an N-type high-concentration diffusion layer formed by diffusing an N-type impurity therein with a high concentration, and wherein the P-type high-concentration diffusion layer and the N-type high-concentration diffusion layer formed in a respective one of the plurality of silicon semiconductor layers are arranged to face each other with the low-concentration diffusion layer interposed there between.