The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Jul. 26, 2007
Peter Moens, Zottegem, BE;
Filip Bauwens, Loppem, BE;
Joris Baele, Ghent, BE;
Marnix Tack, Merelbeke, BE;
Peter Moens, Zottegem, BE;
Filip Bauwens, Loppem, BE;
Joris Baele, Ghent, BE;
Marnix Tack, Merelbeke, BE;
Semiconductor Components Industries, L.L.C., Phoenix, AZ (US);
Abstract
The present invention provides a semiconductor device () comprising a trench () formed in a semiconductor substrate formed of a stack () of layers (), a layer () of a first, grown dielectric material covering sidewalls and bottom of the trench (), the layer () including one or more notches () at the bottom of the trench () and one or more spacers () formed of a second, deposited dielectric material to fill the one or more notches () in the layer () formed of the first, grown dielectric material. The semiconductor device () according to the present invention shows improved breakdown voltage and on-resistance. The present invention furthermore provides a method for the manufacturing of such semiconductor devices ().