The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Apr. 07, 2006
Roman Hamerski, Overland Park, KS (US);
Chris Hruska, Blue Springs, MO (US);
Fazia Hossain, Lee's Summit, MO (US);
Roman Hamerski, Overland Park, KS (US);
Chris Hruska, Blue Springs, MO (US);
Fazia Hossain, Lee's Summit, MO (US);
Diodes Fabtech Inc, Lee's Summit, MO (US);
Abstract
A rectifier device () comprising a multi-layer epitaxial film () and a rectifier and a transistor manufactured in the film (), wherein the transistor is oriented vertically relative to the plane of the rectifier. The rectifier and transistor are separated by a transition zone of inverted bias. The rectifier is a Schottky barrier rectifier, and the transistor is a JFET. More specifically, the device () comprises the film (), a trench (), a first region () associated with an upper portion of the trench (), and second region () associated with a lower portion. The interface between the p+ material of the second region () and the n material of the film () creates a p+/n junction. The device () has use in high frequency, low-loss power circuit applications in which high switching speed and low forward voltage drop are desirable.