The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Aug. 01, 2006
Ken-ichi Nonaka, Wako, JP;
Hideki Hashimoto, Wako, JP;
Seiichi Yokoyama, Wako, JP;
Hiroaki Iwakuro, Hanno, JP;
Koichi Nishikawa, Hanno, JP;
Masaaki Shimizu, Hanno, JP;
Yusuke Fukuda, Hanno, JP;
Ken-ichi Nonaka, Wako, JP;
Hideki Hashimoto, Wako, JP;
Seiichi Yokoyama, Wako, JP;
Hiroaki Iwakuro, Hanno, JP;
Koichi Nishikawa, Hanno, JP;
Masaaki Shimizu, Hanno, JP;
Yusuke Fukuda, Hanno, JP;
Honda Motor Co., Ltd., Tokyo, JP;
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Abstract
A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.