The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Oct. 27, 2006
Kun Yoo Ko, Kyungki-do, KR;
Young Ho Park, Kyungki-do, KR;
Bok Ki Min, Kyungki-do, KR;
Hyung Jin Park, Kyungki-do, KR;
Seok Min Hwang, Kyungki-do, KR;
Kun Yoo Ko, Kyungki-do, KR;
Young Ho Park, Kyungki-do, KR;
Bok Ki Min, Kyungki-do, KR;
Hyung Jin Park, Kyungki-do, KR;
Seok Min Hwang, Kyungki-do, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-Do, KR;
Abstract
The invention relates to a high-quality semiconductor light emitting device which suppresses current concentration. The semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate. The semiconductor light emitting device further includes a p-electrode formed on the p-type semiconductor layer and an n-electrode formed on a surface of a mesa-etched portion of the n-type semiconductor layer. A trench is formed in the n-type semiconductor layer to prevent current concentration. The trench is extended from an upper surface of the mesa-etched portion of the n-type semiconductor layer or from a bottom surface of the substrate into the n-type semiconductor layer at a predetermined depth.