The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Jul. 10, 2006
Shunpei Yamazaki, Setagaya-ku, JP;
Satoshi Teramoto, Atsugi, JP;
Jun Koyama, Sagamihara, JP;
Yasushi Ogata, Atsugi, JP;
Masahiko Hayakawa, Atsugi, JP;
Mitsuaki Osame, Atsugi, JP;
Hisashi Ohtani, Isehara, JP;
Toshiji Hamatani, Atsugi, JP;
Shunpei Yamazaki, Setagaya-ku, JP;
Satoshi Teramoto, Atsugi, JP;
Jun Koyama, Sagamihara, JP;
Yasushi Ogata, Atsugi, JP;
Masahiko Hayakawa, Atsugi, JP;
Mitsuaki Osame, Atsugi, JP;
Hisashi Ohtani, Isehara, JP;
Toshiji Hamatani, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd, Atsugi-shi, Kanagawa-ken, unknown;
Abstract
Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, in the silicon film, impurities included such as oxygen or chlorine, are segregated with extending along the crystal growth, the crystallinity is improved, and the gettering of nickel element proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm/Vs and an S value smaller than 100 mV/dec. can be obtained.