The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Oct. 05, 2005
Lionel Canioni, Gradignan, FR;
Rysvan Maleck-rassoul, Pessac, FR;
Patrick Mounaix, St Denis de Pile, FR;
Laurent Sarger, Talence, FR;
Lionel Canioni, Gradignan, FR;
Rysvan Maleck-Rassoul, Pessac, FR;
Patrick Mounaix, St Denis de Pile, FR;
Laurent Sarger, Talence, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Centre National de la Recherche Scientifique, Paris, FR;
L'Universite de Bordeaux I, Talence, FR;
Abstract
This invention relates to a wide band optical gate in the terahertz domain (wavelengths in the far infrared). It comprises a first optical source () emitting a first beam (FTHz) in said terahertz domain, a first plate made of a semiconducting material () illuminated by said terahertz beam and a second optical source () emitting a second beam (FIR) at a wavelength capable of saturating the first plate () made of a semi-conducting material and making it reflective at terahertz wavelengths. This invention also relates to a system for measuring terahertz signals and to a terahertz generator. It is particularly applicable to systems for measuring terahertz signals and to terahertz generators.