The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Sep. 29, 2006
Laurence P. Sadwick, Salt Lake City, UT (US);
Mohammad M. Mojarradi, La Canada, CA (US);
Ruey-jen Hwu, Salt Lake City, UT (US);
Jehn-huar Chern, Salt Lake City, UT (US);
Laurence P. Sadwick, Salt Lake City, UT (US);
Mohammad M. Mojarradi, La Canada, CA (US);
Ruey-Jen Hwu, Salt Lake City, UT (US);
Jehn-Huar Chern, Salt Lake City, UT (US);
Other;
Abstract
The present invention includes processes and packaging for high voltage integrated circuits (ICs), high voltage electronic devices and high voltage electronic circuits which operate over a wide range of voltages, e.g., from tens of volts to tens of thousands of volts. The inventive processes and packaging are particularly suitable for integrating low or lower voltage circuits or transistors to form high voltage ICs, high voltage electronic devices and high voltage electronic circuits. The inventive processes and packaging are also particularly suitable for isolating high voltage electronics to achieve high breakdown voltages and for supporting high voltage operation. The inventive processes may be used with any suitable semiconductor materials using conventional semiconductor fabrication and related facilities.