The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Jul. 17, 2007
Hajime Goto, Wako, JP;
Hajime Goto, Wako, JP;
Honda Motor Co., Ltd., Tokyo, JP;
Abstract
The present invention provides a method for manufacturing a multi-junction solar cell which makes it possible to implement a 4-junction solar cell and to increase the area of a device. A nucleus generation site is disposed on a substratemade of a first semiconductor. A first material gas is fed to the nucleus generation site to form a wire-like semiconductorin the nucleus generation site. A third material gas and a fourth material gas are fed to form a wire-like semiconductoron the semiconductorand a wire-like semiconductoron the semiconductor. A nucleus generation site is disposed on a substrate. The first material gas is fed to the nucleus generation site to form a wire-like semiconductorin the nucleus generation site. A second material gas to the fourth material gas are fed to form the wire-like semiconductoron the semiconductor, the wire-like semiconductoron the semiconductor, and the wire-like semiconductoron the semiconductor. The bandgaps of the semiconductors decrease and increase consistently with the distance to the substrateor. The nucleus generation site is made of catalytic particles such as Au. The semiconductorsandare Ge, the semiconductoris InGaAs, the semiconductoris GaAs, and the semiconductoris AlGaAs.